*==========================
*IGBT Pinout: 1=C, 2=G, 3=E
*==========================

*IRGBC20S  MCE  C G E  7-13-95
*600V 19A 16.8ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC20S 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  22.2M
RE  83 73  2.22M
RG  72 82  41.5
CGE 82 83  675P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  670P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=23.4P NF=1.2 BF=5.1 CJE=1.64N TF=16.8N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=1)
.MODEL DR D (IS=2.34P CJO=47.8P VJ=1 M=.82)
.MODEL DO D (IS=2.34P BV=600 CJO=979P VJ=1 M=.7)
.MODEL DE D (IS=2.34P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC20S

*IRGBC30S  MCE  C G E  7-13-95
*600V 34A 22.4ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC30S 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  11.2M
RE  83 73  1.12M
RG  72 82  28.5
CGE 82 83  1.2N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.19N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=68.3P NF=1.2 BF=5.1 CJE=2.96N TF=22.4N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=1.8)
.MODEL DR D (IS=6.83P CJO=85.6P VJ=1 M=.82)
.MODEL DO D (IS=6.83P BV=600 CJO=1.76N VJ=1 M=.7)
.MODEL DE D (IS=6.83P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC30S 

*IRGBC40S  MCE  C G E  7-13-95
*600V 50A 27.2ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC40S 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  6.77M
RE  83 73  677U
RG  72 82  21.7
CGE 82 83  1.77N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.76N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=163P NF=1.2 BF=5.1 CJE=4.35N TF=27.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.65)
.MODEL DR D (IS=16.3P CJO=125P VJ=1 M=.82)
.MODEL DO D (IS=16.3P BV=600 CJO=2.59N VJ=1 M=.7)
.MODEL DE D (IS=16.3P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC40S 

*XIRGPC40S  MCE  C G E  7-13-95
*600V 60A 29.8ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC40S 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  5.64M
RE  83 73  564U
RG  72 82  19
CGE 82 83  2.13N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  2.11N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=196P NF=1.2 BF=5.1 CJE=5.23N TF=29.8N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=3.18)
.MODEL DR D (IS=19.6P CJO=151P VJ=1 M=.82)
.MODEL DO D (IS=19.6P BV=600 CJO=3.11N VJ=1 M=.7)
.MODEL DE D (IS=19.6P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC40S 

*IRGPC50S  MCE  C G E  7-13-95
*600V 70A 32.2ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC50S 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  3.62M
RE  83 73  362U
RG  72 82  16.8
CGE 82 83  2.49N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  2.46N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=607P NF=1.2 BF=5.1 CJE=6.1N TF=32.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=3.71)
.MODEL DR D (IS=60.7P CJO=176P VJ=1 M=.82)
.MODEL DO D (IS=60.7P BV=600 CJO=3.63N VJ=1 M=.7)
.MODEL DE D (IS=60.7P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC50S 

*IRGBC20F  MCE  C G E  7-13-95
*600V 16A 15.4ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC20F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  47.6M
RE  83 73  4.76M
RG  72 82  46.1
CGE 82 83  568P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  564P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=400F NF=1.2 BF=5.1 CJE=1.38N TF=15.4N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=.849)
.MODEL DR D (IS=40F CJO=40.3P VJ=1 M=.82)
.MODEL DO D (IS=40F BV=600 CJO=823P VJ=1 M=.7)
.MODEL DE D (IS=40F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC20F 

*IRGBC30F  MCE  C G E  7-13-95
*600V 31A 21.4ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC30F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  15M
RE  83 73  1.5M
RG  72 82  30.3
CGE 82 83  1.1N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.09N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=23.5P NF=1.2 BF=5.1 CJE=2.69N TF=21.4N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=1.64)
.MODEL DR D (IS=2.35P CJO=78P VJ=1 M=.82)
.MODEL DO D (IS=2.35P BV=600 CJO=1.6N VJ=1 M=.7)
.MODEL DE D (IS=2.35P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC30F 

*IRGBC40F  MCE  C G E  7-13-95
*600V 49A 26.9ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC40F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  8.64M
RE  83 73  864U
RG  72 82  22.1
CGE 82 83  1.74N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.72N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=60.5P NF=1.2 BF=5.1 CJE=4.27N TF=26.9N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.6)
.MODEL DR D (IS=6.05P CJO=123P VJ=1 M=.82)
.MODEL DO D (IS=6.05P BV=600 CJO=2.54N VJ=1 M=.7)
.MODEL DE D (IS=6.05P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC40F 

*IRGPC40F  MCE  C G E  7-13-95
*600V 49A 26.9ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC40F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  8.64M
RE  83 73  864U
RG  72 82  22.1
CGE 82 83  1.74N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.72N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=60.5P NF=1.2 BF=5.1 CJE=4.27N TF=26.9N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.6)
.MODEL DR D (IS=6.05P CJO=123P VJ=1 M=.82)
.MODEL DO D (IS=6.05P BV=600 CJO=2.54N VJ=1 M=.7)
.MODEL DE D (IS=6.05P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC40F 

*IRGPC50M  MCE  C G E  7-13-95
*600V 70A 32.2ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC50M 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  9.08M
RE  83 73  908U
RG  72 82  16.8
CGE 82 83  2.49N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  2.46N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=7.56P NF=1.2 BF=5.1 CJE=6.1N TF=32.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=3.71)
.MODEL DR D (IS=756F CJO=176P VJ=1 M=.82)
.MODEL DO D (IS=756F BV=600 CJO=3.63N VJ=1 M=.7)
.MODEL DE D (IS=756F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC50M 

*IRGPC50F  MCE  C G E  7-13-95
*600V 70A 32.2ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC50F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  4.23M
RE  83 73  423U
RG  72 82  16.8
CGE 82 83  2.49N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  2.46N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=373P NF=1.2 BF=5.1 CJE=6.1N TF=32.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=3.71)
.MODEL DR D (IS=37.3P CJO=176P VJ=1 M=.82)
.MODEL DO D (IS=37.3P BV=600 CJO=3.63N VJ=1 M=.7)
.MODEL DE D (IS=37.3P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC50F 

*IRGBF20F  MCE  C G E  7-13-95
*900V  9A 11.5ns pkg:TO-220 2,1,3
.SUBCKT XIRGBF20F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  .155
RE  83 73  15.5M
RG  72 82  64.9
CGE 82 83  319P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  317P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=.15F NF=1.2 BF=5.1 CJE=775P TF=11.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=552K THETA=46.1M ETA=1.33M VTO=5.2 KP=.453)
.MODEL DR D (IS=1.50E-17 CJO=22.6P VJ=1 M=.82)
.MODEL DO D (IS=1.50E-17 BV=900 CJO=458P VJ=1 M=.7)
.MODEL DE D (IS=1.50E-17 BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBF20F 

*IRGBF30F  MCE  C G E  7-13-95
*900V 20A 17.2ns pkg:TO-220 2,1,3
.SUBCKT XIRGBF30F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  57.2M
RE  83 73  5.72M
RG  72 82  40.2
CGE 82 83  711P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  705P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=6.23F NF=1.2 BF=5.1 CJE=1.73N TF=17.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=552K THETA=46.1M ETA=1.33M VTO=5.2 KP=1)
.MODEL DR D (IS=.623F CJO=50.3P VJ=1 M=.82)
.MODEL DO D (IS=.623F BV=900 CJO=1.03N VJ=1 M=.7)
.MODEL DE D (IS=.623F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBF30F 

*IRGPF20F  MCE  C G E  7-13-95
*900V  9A 11.5ns pkg:TO-247 2,1,3
.SUBCKT XIRGPF20F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  .155
RE  83 73  15.5M
RG  72 82  64.9
CGE 82 83  319P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  317P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=.15F NF=1.2 BF=5.1 CJE=775P TF=11.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=552K THETA=46.1M ETA=1.33M VTO=5.2 KP=.453)
.MODEL DR D (IS=1.50E-17 CJO=22.6P VJ=1 M=.82)
.MODEL DO D (IS=1.50E-17 BV=900 CJO=458P VJ=1 M=.7)
.MODEL DE D (IS=1.50E-17 BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPF20F 

*IRGPF30F  MCE  C G E  7-13-95
*900V 20A 17.2ns pkg:TO-247 2,1,3
.SUBCKT XIRGPF30F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  57.2M
RE  83 73  5.72M
RG  72 82  40.2
CGE 82 83  711P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  705P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=6.23F NF=1.2 BF=5.1 CJE=1.73N TF=17.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=552K THETA=46.1M ETA=1.33M VTO=5.2 KP=1)
.MODEL DR D (IS=.623F CJO=50.3P VJ=1 M=.82)
.MODEL DO D (IS=.623F BV=900 CJO=1.03N VJ=1 M=.7)
.MODEL DE D (IS=.623F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPF30F 

*IRGPF40F  MCE  C G E  7-13-95
*900V 31A 21.4ns pkg:TO-247 2,1,3
.SUBCKT XIRGPF40F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  31.4M
RE  83 73  3.14M
RG  72 82  30.3
CGE 82 83  1.1N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.09N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=67.8F NF=1.2 BF=5.1 CJE=2.69N TF=21.4N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=552K THETA=46.1M ETA=1.33M VTO=5.2 KP=1.56)
.MODEL DR D (IS=6.78F CJO=78P VJ=1 M=.82)
.MODEL DO D (IS=6.78F BV=900 CJO=1.6N VJ=1 M=.7)
.MODEL DE D (IS=6.78F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPF40F 

*IRGPF50F  MCE  C G E  7-13-95
*900V 51A 27.5ns pkg:TO-247 2,1,3
.SUBCKT XIRGPF50F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  14.1M
RE  83 73  1.41M
RG  72 82  21.4
CGE 82 83  1.81N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.79N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=2.07P NF=1.2 BF=5.1 CJE=4.44N TF=27.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=552K THETA=46.1M ETA=1.33M VTO=5.2 KP=2.57)
.MODEL DR D (IS=207F CJO=128P VJ=1 M=.82)
.MODEL DO D (IS=207F BV=900 CJO=2.64N VJ=1 M=.7)
.MODEL DE D (IS=207F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPF50F 

*IRGPH40M  MCE  C G E  7-13-95
*1200V 26A 19.6ns pkg:TO-247 2,1,3
.SUBCKT XIRGPH40M 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  32.6M
RE  83 73  3.26M
RG  72 82  34
CGE 82 83  924P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  916P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=245F NF=1.2 BF=5.1 CJE=2.26N TF=19.6N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=46.1M ETA=1M VTO=5.2 KP=1.27)
.MODEL DR D (IS=24.5F CJO=65.4P VJ=1 M=.82)
.MODEL DO D (IS=24.5F BV=1.2K CJO=1.34N VJ=1 M=.7)
.MODEL DE D (IS=24.5F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPH40M 

*IRGPH50M  MCE  C G E  7-13-95
*1200V 40A 24.3ns pkg:TO-247 2,1,3
.SUBCKT XIRGPH50M 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  19M
RE  83 73  1.9M
RG  72 82  25.5
CGE 82 83  1.42N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.41N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=1P NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=46.1M ETA=1M VTO=5.2 KP=1.95)
.MODEL DR D (IS=100F CJO=100P VJ=1 M=.82)
.MODEL DO D (IS=100F BV=1.2K CJO=2.07N VJ=1 M=.7)
.MODEL DE D (IS=100F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPH50M 

*IRGPH40F  MCE  C G E  7-13-95
*1200V 40A 24.3ns pkg:TO-247 2,1,3
.SUBCKT XIRGPH40F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  12.7M
RE  83 73  1.27M
RG  72 82  25.5
CGE 82 83  1.42N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.41N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=18.6P NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=46.1M ETA=1M VTO=5.2 KP=1.95)
.MODEL DR D (IS=1.86P CJO=100P VJ=1 M=.82)
.MODEL DO D (IS=1.86P BV=1.2K CJO=2.07N VJ=1 M=.7)
.MODEL DE D (IS=1.86P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPH40F 

*IRGBH50F  MCE  C G E  7-13-95
*1200V 50A 27.2ns pkg:TO-247 2,1,3
.SUBCKT XIRGBH50F 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  10.1M
RE  83 73  1.01M
RG  72 82  21.7
CGE 82 83  1.77N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.76N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=23.3P NF=1.2 BF=5.1 CJE=4.35N TF=27.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=46.1M ETA=1M VTO=5.2 KP=2.44)
.MODEL DR D (IS=2.33P CJO=125P VJ=1 M=.82)
.MODEL DO D (IS=2.33P BV=1.2K CJO=2.59N VJ=1 M=.7)
.MODEL DE D (IS=2.33P BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBH50F 

*IRGB420U  MCE  C G E  7-13-95
*500V 14A 14.4ns pkg:TO-220 2,1,3
.SUBCKT XIRGB420U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  60.5M
RE  83 73  6.05M
RG  72 82  50
CGE 82 83  497P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  493P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=132F NF=1.2 BF=5.1 CJE=1.21N TF=14.4N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=349K THETA=46.1M ETA=2.4M VTO=5.2 KP=.762)
.MODEL DR D (IS=13.2F CJO=35.2P VJ=1 M=.82)
.MODEL DO D (IS=13.2F BV=500 CJO=718P VJ=1 M=.7)
.MODEL DE D (IS=13.2F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGB420U 

*IRGB430U  MCE  C G E  7-13-95
*500V 25A 19.2ns pkg:TO-220 2,1,3
.SUBCKT XIRGB430U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  33.9M
RE  83 73  3.39M
RG  72 82  34.9
CGE 82 83  889P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  881P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=236F NF=1.2 BF=5.1 CJE=2.17N TF=19.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=349K THETA=46.1M ETA=2.4M VTO=5.2 KP=1.36)
.MODEL DR D (IS=23.6F CJO=62.9P VJ=1 M=.82)
.MODEL DO D (IS=23.6F BV=500 CJO=1.29N VJ=1 M=.7)
.MODEL DE D (IS=23.6F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGB430U 

*IRGB440U  MCE  C G E  7-13-95
*500V 40A 24.3ns pkg:TO-220 2,1,3
.SUBCKT XIRGB440U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  21.1M
RE  83 73  2.11M
RG  72 82  25.5
CGE 82 83  1.42N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.41N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=349K THETA=46.1M ETA=2.4M VTO=5.2 KP=2.17)
.MODEL DR D (IS=37.7F CJO=100P VJ=1 M=.82)
.MODEL DO D (IS=37.7F BV=500 CJO=2.07N VJ=1 M=.7)
.MODEL DE D (IS=37.7F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGB440U 

*IRGBC20U  MCE  C G E  7-13-95
*600V 13A 13.8ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC20U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  65.2M
RE  83 73  6.52M
RG  72 82  52.3
CGE 82 83  461P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  458P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=122F NF=1.2 BF=5.1 CJE=1.12N TF=13.8N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=.69)
.MODEL DR D (IS=12.2F CJO=32.7P VJ=1 M=.82)
.MODEL DO D (IS=12.2F BV=600 CJO=666P VJ=1 M=.7)
.MODEL DE D (IS=12.2F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC20U 

*IRGBC30U  MCE  C G E  7-13-95
*600V 23A 18.4ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC30U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  36.8M
RE  83 73  3.68M
RG  72 82  36.8
CGE 82 83  817P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  811P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=217F NF=1.2 BF=5.1 CJE=1.99N TF=18.4N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=1.22)
.MODEL DR D (IS=21.7F CJO=57.9P VJ=1 M=.82)
.MODEL DO D (IS=21.7F BV=600 CJO=1.18N VJ=1 M=.7)
.MODEL DE D (IS=21.7F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC30U 

*IRGBC40U  MCE  C G E  7-13-95
*600V  40A  24.3ns pkg:TO-220 2,1,3
.SUBCKT XIRGBC40U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  21.1M
RE  83 73  2.11M
RG  72 82  25.5
CGE 82 83  1.42N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.41N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.12)
.MODEL DR D (IS=37.7F CJO=100P VJ=1 M=.82)
.MODEL DO D (IS=37.7F BV=600 CJO=2.07N VJ=1 M=.7)
.MODEL DE D (IS=37.7F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGBC40U 

*IRGP420U  MCE  C G E  7-13-95
*500V 14A 14.4ns pkg:TO-247 2,1,3
.SUBCKT XIRGP420U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  60.5M
RE  83 73  6.05M
RG  72 82  50
CGE 82 83  497P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  493P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=132F NF=1.2 BF=5.1 CJE=1.21N TF=14.4N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=349K THETA=46.1M ETA=2.4M VTO=5.2 KP=.762)
.MODEL DR D (IS=13.2F CJO=35.2P VJ=1 M=.82)
.MODEL DO D (IS=13.2F BV=500 CJO=718P VJ=1 M=.7)
.MODEL DE D (IS=13.2F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGP420U 

*IRGP430U  MCE  C G E  7-13-95
*500V 25A 19.2ns pkg:TO-247 2,1,3
.SUBCKT XIRGP430U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  33.9M
RE  83 73  3.39M
RG  72 82  34.9
CGE 82 83  889P
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  881P
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=236F NF=1.2 BF=5.1 CJE=2.17N TF=19.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=349K THETA=46.1M ETA=2.4M VTO=5.2 KP=1.36)
.MODEL DR D (IS=23.6F CJO=62.9P VJ=1 M=.82)
.MODEL DO D (IS=23.6F BV=500 CJO=1.29N VJ=1 M=.7)
.MODEL DE D (IS=23.6F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGP430U 

*IRGP440U  MCE  C G E  7-13-95
*500V 40A 24.3ns pkg:TO-247 2,1,3
.SUBCKT XIRGP440U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  21.1M
RE  83 73  2.11M
RG  72 82  25.5
CGE 82 83  1.42N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.41N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=349K THETA=46.1M ETA=2.4M VTO=5.2 KP=2.17)
.MODEL DR D (IS=37.7F CJO=100P VJ=1 M=.82)
.MODEL DO D (IS=37.7F BV=500 CJO=2.07N VJ=1 M=.7)
.MODEL DE D (IS=37.7F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGP440U 

*IRGPC40U  MCE  C G E  7-13-95
*600V 40A 24.3ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC40U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  21.1M
RE  83 73  2.11M
RG  72 82  25.5
CGE 82 83  1.42N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.41N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=377F NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.12)
.MODEL DR D (IS=37.7F CJO=100P VJ=1 M=.82)
.MODEL DO D (IS=37.7F BV=600 CJO=2.07N VJ=1 M=.7)
.MODEL DE D (IS=37.7F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC40U 

*IRGPC50K  MCE  C G E  7-13-95
*600V 55A 28.5ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC50K 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  11.5M
RE  83 73  1.15M
RG  72 82  20.3
CGE 82 83  1.95N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.93N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=5.94P NF=1.2 BF=5.1 CJE=4.79N TF=28.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.91)
.MODEL DR D (IS=594F CJO=138P VJ=1 M=.82)
.MODEL DO D (IS=594F BV=600 CJO=2.85N VJ=1 M=.7)
.MODEL DE D (IS=594F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC50K 

*IRGPC50U  MCE  C G E  7-13-95
*600V 55A 28.5ns pkg:TO-247 2,1,3
.SUBCKT XIRGPC50U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  15.4M
RE  83 73  1.54M
RG  72 82  20.3
CGE 82 83  1.95N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.93N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=519F NF=1.2 BF=5.1 CJE=4.79N TF=28.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.1M ETA=2M VTO=5.2 KP=2.91)
.MODEL DR D (IS=51.9F CJO=138P VJ=1 M=.82)
.MODEL DO D (IS=51.9F BV=600 CJO=2.85N VJ=1 M=.7)
.MODEL DE D (IS=51.9F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPC50U 

*IRGPH50U  MCE  C G E  7-13-95
*1200V 40A 24.3ns pkg:TO-247 2,1,3
.SUBCKT XIRGPH50U 71 72 74
Q1  83 81 85     QOUT
M1  81 82 83 83  MFIN L=1U W=1U
DSD 83 81  DO
DBE 85 81  DE
RC  85 71  30.7M
RE  83 73  3.07M
RG  72 82  25.5
CGE 82 83  1.42N
CGC 82 71  1P
EGD 91  0 82 81  1
VFB 93  0  0
FFB 82 81  VFB  1
CGD 92 93  1.41N
R1  92  0  1
D1  91 92  DLIM
DHV 94 93  DR
R2  91 94  1
D2  94  0  DLIM
LE  73 74  7.5N
DLV 94 95  DR 13
RLV 95  0  1
ESD 96 93  POLY(1) 83 81  19  1
MLV 95 96 93 93  SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=4.7F NF=1.2 BF=5.1 CJE=3.48N TF=24.3N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=46.1M ETA=1M VTO=5.2 KP=1.95)
.MODEL DR D (IS=.47F CJO=100P VJ=1 M=.82)
.MODEL DO D (IS=.47F BV=1.2K CJO=2.07N VJ=1 M=.7)
.MODEL DE D (IS=.47F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS XIRGPH50U